PART |
Description |
Maker |
3SK134B 3SK134B-T1 3SK134B-VM 3SK134B-T2 |
Dual-gate MOS FET RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
|
NEC
|
BF995B BF995A BF995 |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode From old datasheet system N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode From old datasheet system N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
|
Vishay Telefunken
|
3SK249 E001708 |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER APPLICATIONS) N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS) From old datasheet system
|
Toshiba Semiconductor Sanyo Semicon Device
|
BF1206F |
Dual N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
BF1206 |
Dual N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
BF1205C |
Dual N-channel dual gate MOS-FET
|
PHILIPS[Philips Semiconductors]
|
BF1102 |
Dual N-channel dual gate MOS-FET
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
BF991 |
N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
BF1109WR BF1109 BF1109R |
N-channel dual-gate MOS-FETs
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
3SK295 |
Silicon N-Channel Dual Gate MOS FET
|
HITACHI[Hitachi Semiconductor]
|